本品是使用rohm生产的sic-dmosfet和sic肖特基势垒二极管的斩波结构的sic mosfet模块。

购买 *
* 本产品是标准级的产品。
本产品不建议使用于车载设备。

主要规格

 
型号 | bsm180d12p2e002
status | 推荐品
封装 | e
包装数量 | 4
最小独立包装数量 | 4
包装形态 | corrugated cardboard
rohs |

特性:

drain-source voltage[v]

1200

drain current[a]

204

total power dissipation[w]

1360

junction temperature(max.)[°c]

175

storage temperature (min.)[°c]

-40

storage temperature (max.)[°c]

125

package

half bridge

package size [mm]

152x57.95 (t=18)

特点:

  • low surge, low switching loss.
  • high-speed switching possible.
  • reduced temperature dependance.

reference design / application evaluation kit

 
    • drive board - bsmgd2g12d24-evk001
    • this evaluation board, bsmgd2g12d24-evk001, is a gate driver board for full sic modules with the 2nd generation sic-mosfet in g and e type housing. this evaluation board contains all the necessary components for optimal and safety driving the sic module

  • user guide
    • drive board for bsm series (1200v, c / e / g type)

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